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8 Megabit (256K x 32-Bit) EEPROM MCM
79C0832
Logic Diagram
Memory
FEATURES:
* Eight 128k x 8-bit EEPROM MCM * RAD-PAK(R) radiation-hardened against natural space radiation * Total dose hardness: - >100 krad (Si), depending upon space mission * Excellent Single event effects - SELTH > 120 MeV/mg/cm2 - SEU > 90 MeV/mg/cm2 read mode - SEU = 18 MeV/mg/cm2 write mode * Package: 96 pin RAD-PAK(R) quad flat pack * High endurance - 10,000 cycles/byte, 10 year data retention * Page Write Mode: 1 to 8 X 128 byte page * High Speed: - 150 and 200 ns maximum access times * Automatic programming - 10 ms automatic Page/Byte write * Low power dissipation - 160 mW/MHz active current - 880 W standby current
DESCRIPTION:
Maxwell Technologies' 79C0832 multi-chip module (MCM) memory features a greater than 100 krad (Si) total dose tolerance, depending upon space misssion. Using Maxwell Technologies' patented radiation-hardened RAD-PAK(R) MCM packaging technology, the 79C0832 is the first radiation-hardened 8 megabit MCM EEPROM for space application. The 79C0832 uses eight 1 Megabit high speed CMOS die to yield an 8 megabit product. The 79C0832 is capable of in-system electrical byte and page programmability. It has a 128 x 8 byte page programming function to make its erase and write operations faster. It also features Data Polling and a Ready/Busy signal to indicate the completion of erase and programming operations. In the 79C0832, hardware data protection is provided with the RES pin, in addition to noise protection on the WE signal and write inhibit on power on and off. Software data protection is implemented using the JEDEC optional standard algorithm. Maxwell Technologies' patented RAD-PAK(R) packaging technology incorporates radiation shielding in the microcircuit package. It eliminates the need for box shielding while providing the required radiation shielding for a lifetime in orbit or space mission. In a GEO orbit, RAD-PAK provides greater than 100 krad (Si) radiation dose tolerance. This product is available with screening up to Class K.
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(c)2001 Maxwell Technologies All rights reserved.
8 Megabit (256K x 32-Bit) EEPROM MCM
TABLE 1. 79C0832 PINOUT DESCRIPTION
PIN 84-77, 29-37 48-55, 66-73, 96, 1-7, 18-25 61 41, 43 36 10, 17, 28, 40, 44, 58, 65, 76, 87, 93 8, 9, 10-16, 26, 27, 38, 42, 46, 56, 57, 59, 60, 62-64, 74, 75, 85, 86, 88-92, 94, 95 39 47 SYMBOL ADDR0 to ADDR16 I/O0 to I/O31 OE CE0-1 WE 5V GND DESCRIPTION Address Input Data Input/Output Output Enable Chip Enable 0 through 1 Write Enable Power Supply Ground
79C0832
Memory
RDY/BUSY RES
Ready/Busy Reset
TABLE 2. 79C0832 ABSOLUTE MAXIMUM RATINGS
PARAMETER Supply Voltage Input Voltage Operating Temperature Range Storage Temperature Range 1. VIN min = -3.0V for pulse width <50ns. SYMBOL VCC VIN TOPR TSTG MIN -0.6 -0.51 -55 -65 MAX 7.0 7.0 125 150 UNIT V V
C C
TABLE 3. 79C0832 RECOMMENDED DC OPERATING CONDITIONS
PARAMETER Supply Voltage Input Voltage RES_PIN Operating Temperature Range 1. VIL min = -1.0V for pulse width < 50 ns SYMBOL VCC VIL VIH VH TOPR MIN 4.5 -0.31 2.2 VCC-0.5 -55 MAX 5.5 0.8 VCC +0.3 VCC +1 125 UNIT V V V V
C
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(c)2001 Maxwell Technologies All rights reserved
8 Megabit (256K x 32-Bit) EEPROM MCM
TABLE 4. 79C0832 CAPACITANCE
(TA = 25 C, f = 1 MHz) PARAMETER Input Capacitance: VIN = 0V1 Output Capacitance: VOUT = 1. Guaranteed by design. 0V1 SYMBOL CIN COUT MIN ---
79C0832
MAX 6 12
UNIT pF pF
TABLE 5. 79C0832 DC ELECTRICAL CHARACTERISTICS
(VCC = 5V 10%, TA = -55 TO +125C) PARAMETER Input Leakage Current Standby VCC Current TEST CONDITION (VCC = 5.5V, VIN = 5.5V) SYMBOL ILI ILO ICC1 ICC2 ICC3 MIN ------VIL VIH VH Data Lines - VCC = Min, Iol = 2.1mA RDYZ/BSY_Lines - VCC Min, Iol = 12mA Data Lines - VCC = Min, Ioh = -400A RDYZ/BSY_Lines - VCC Min, Ioh = -12mA 1. IIL on RES = 800 uA MAX. 2. One CE Active. VOL VOL VOH VOH MAX 16 1 16 802 42 602 2002 0.8 2.2 VCC -0.5 -2.4 3.15 0.4 0.4 --V V V V V V V UNITS
A
A
Output Leakage Current (VCC = 5.5V, VOUT = 5.5V/0.4V) CE = VCC CE = VIH IOUT = 0mA, Duty = 100%, Cycle = 1 us at VCC = 5.5V IOUT = 0mA, Duty = 100%, Cycle = 150 ns at VCC = 5.5V
Memory
A mA mA
Operating VCC Current
Input Voltage RES_PIN Output Voltage
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(c)2001 Maxwell Technologies All rights reserved
8 Megabit (256K x 32-Bit) EEPROM MCM
79C0832
TABLE 6. 79C0832 AC ELECTRICAL CHARACTERISTICS FOR READ OPERATION 1
(VCC = 5V 10%, TA = -55 TO +125C) PARAMETER Address Access Time CE = OE = VIL, WE = VIH -150 -200 Chip Enable Access Time OE = VIL, WE = VIH -150 -200 Output Enable Access TIme CE = VIL, WE = VIH -150 -200 Output Hold to Address Change CE = OE =VIL, WE = VIH -150 -200 Output Disable to High-Z 2 CE = VIL, WE = VIH -150 -200 CE = OE = VIL, WE = VIH -150 -200 RES to Output Delay CE = OE = VIL, WE = VIH3 -150 -200 SYMBOL tACC MIN ----0 0 0 0 MAX 150 200 ns 150 200 ns 75 125 ns --UNIT ns
tCE
tOE
tOH
Memory
tDF tDFR
ns 0 0 0 0 0 0 50 60 ns 350 450 ns 450 650
TRR
1. Test conditions: input pulse levels = 0.4V to 2.4V; input rise and fall times < 20 ns; output load = 1 TTL gate + 100 pF (including scope and jig); reference levels for measuring timing = 0.8 V/1.8 V. 2. tDF and tDFR are defined as the time at which the output becomes an open circuit and data is no longer driven. 3. Guaranteed by design.
TABLE 7. 79C0832 AC ELECTRICAL CHARACTERISTICS FOR WRITE OPERATION
(VCC = 5V 10%, TA = -55 TO +125C) PARAMETER Address Setup Time -150 -200 Chip Enable to Write Setup Time (WE controlled) -150 -200 SYMBOL tAS MIN 1 0 0 0 0 MAX --ns --UNITS ns
tCS
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(c)2001 Maxwell Technologies All rights reserved
8 Megabit (256K x 32-Bit) EEPROM MCM
(VCC = 5V 10%, TA = -55 TO +125C) PARAMETER Write Pulse Width CE controlled -150 -200 WE controlled -150 -200 Address Hold Time -150 -200 Data Setup Time -150 -200 Data Hold Time -150 -200 Chip Enable Hold Time (WE controlled) -150 -200 Write Enable to Write Setup Time (CE controlled) -150 -200 Write Enable Hold Time (CE controlled) -150 -200 Output Enable to Write Setup Time -150 -200 Output Enable Hold Time -150 -200 Write Cycle Time 2 -150 -200 Data Latch Time -150 -200 Byte Load Window -150 -200 Byte Load Cycle -150 -200
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79C0832
MIN 1 MAX UNITS ns 250 350 250 350 150 200 120 200 10 20 0 0 0 0 0 0 0 0 0 0 --300 400 100 200 0.55 0.95 --ns --ns --ns --ns --ns --ns --ns --ns --ns --ms 10 20 ns --s --s 30 50
TABLE 7. 79C0832 AC ELECTRICAL CHARACTERISTICS FOR WRITE OPERATION
SYMBOL tCW tWP
tAH
tDS
tDH
Memory
tCH
tWS
tWH
tOES
tOEH
tWC
tDL
tBL
tBLC
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(c)2001 Maxwell Technologies All rights reserved
8 Megabit (256K x 32-Bit) EEPROM MCM
(VCC = 5V 10%, TA = -55 TO +125C) PARAMETER Time to Device Busy -150 -200 Write Start Time 3 -150 -200 RES to Write Setup Time -150 -200 VCC to RES Setup Time4 -150 -200 1. Use this device in a longer cycle than this value. SYMBOL tDB MIN 1 120 170 150 250 100 200 1 3
79C0832
MAX --ns --s --s --UNITS ns
TABLE 7. 79C0832 AC ELECTRICAL CHARACTERISTICS FOR WRITE OPERATION
tDW
tRP
tRES
2. tWC must be longer than this value unless polling techniques or RDY/BUSY are used. This device automatically completes the internal write operation within this value. 3. Next read or write operation can be initiated after tDW if polling techniques or RDY/BUSY are used. 4. Guaranteed by desgin.
Memory
TABLE 8. 79C0832 MODE SELECTION 1, 2
PARAMETER Read Standby Write Deselect Write Inhibit Data Polling Program 1. X = Don't care. 2. Refer to the recommended DC operating conditions. 3. For CE1-4 only one CE can be used ("on") at a time. CE 3 VIL VIH VIL VIL X X VIL X OE VIL X VIH VIH X VIL VIL X WE VIH X VIL VIH VIH X VIH X I/O DOUT High-Z DIN High-Z --Data Out (I/O7) High-Z RES VH X VH VH X X VH VIL RDY/BUSY High-Z High-Z High-Z --> VOL High-Z --VOL High-Z
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(c)2001 Maxwell Technologies All rights reserved
8 Megabit (256K x 32-Bit) EEPROM MCM
FIGURE 1. READ TIMING WAVEFORM
79C0832
Memory
FIGURE 2. BYTE WRITE TIMING WAVEFORM (1) (WE CONTROLLED)
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8 Megabit (256K x 32-Bit) EEPROM MCM
FIGURE 3. BYTE WRITE TIMING WAVEFORM (2) (CE CONTROLLED)
79C0832
Memory
FIGURE 4. PAGE WRITE TIMING WAVEFORM (1) (WE CONTROLLED)
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(c)2001 Maxwell Technologies All rights reserved
8 Megabit (256K x 32-Bit) EEPROM MCM
FIGURE 5. PAGE WRITE TIMING WAVEFORM (2) (CE CONTROLLED)
79C0832
Memory
FIGURE 6. DATA POLLING TIMING WAVEFORM
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(c)2001 Maxwell Technologies All rights reserved
8 Megabit (256K x 32-Bit) EEPROM MCM
79C0832
FIGURE 7. SOFTWARE DATA PROTECTION TIMING WAVEFORM (1) (IN PROTECTION MODE)
FIGURE 8. SOFTWARE DATA PROTECTION WAVEFORM (2) (IN NON-PROTECTION MODE)
Memory
EEPROM APPLICATION NOTES
This application note describes the programming procedures for the EEPROM modules and with details of various techniques to preserve data protection.
Automatic Page Write
Page-mode write feature allows 1 to 128 bytes of data to be written into the EEPROM in a single write cycle, and allows the undefined data within 128 bytes to be written corresponding to the undefined address (A0 to A6). Loading the first byte of data, the data load window opens 30s for the second byte. In the same manner each additional byte of data can be loaded within 30s. In case CE and WE are kept high for 100(s after data input, EEPROM enters erase and write mode automatically and only the input data are written into the EEPROM.
WE, CE Pin Operation
During a write cycle, addresses are latched by the falling edge of WE or CE, and data is latched by the rising edge of WE or CE.
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(c)2001 Maxwell Technologies All rights reserved
8 Megabit (256K x 32-Bit) EEPROM MCM
Data Polling
79C0832
Data Polling function allows the status of the EEPROM to be determined. If EEPROM is set to read mode during a write cycle, an inversion of the last byte of data to be loaded outputs from I/O 7 to indicate that the EEPROM is performing a write operation.
RDY/Busy Signal
RDY/Busy signal also allows a comparison operation to determine the status of the EEPROM. The RDY/Busy signal has high impedance except in write cycle and is lowered to VOL after the first write signal. At the-end of a write cycle, the RDY/Busy signal changes state to high impedance.
RES Signal
When RES is LOW, the EEPROM cannot be read and programmed. Therefore, data can be protected by keeping RES low when VCC is switched. RES should be high during read and programming because it doesn't provide a latch function.
Memory
Data Protection
To protect the data during operation and power on/off, the EEPROM has the internal functions described below.
1. Data Protection against Noise of Control Pins (CE, OE, WE) during Operation.
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(c)2001 Maxwell Technologies All rights reserved
8 Megabit (256K x 32-Bit) EEPROM MCM
79C0832
During readout or standby, noise on the control pins may act as a trigger and turn the EEPROM to programming mode by mistake. To prevent this phenomenon, the EEPROM has a noise cancellation function that cuts noise if its width is 20ns or less in programming mode. Be careful not to allow noise of a width of more than 20ns on the control pins.
2. Data Protection at VCC on/off When VCC is turned on or off, noise on the control pins generated by external circuits, such as CPUs, may turn the EEPROM to programming mode by mistake. To prevent this unintentional programming, the EEPROM must be kept in unprogrammable state during VCC on/off by using a CPU reset signal to RES pin.
Memory
RES should be kept at VSS level when VCC is turned on or off. The EEPROM breaks off programming operation when RES become low, programming operation doesn't finish correctly in case that RES falls low during programming operation. RES should be kept high for 10 ms after the last data input.
3. Software Data Protection
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(c)2001 Maxwell Technologies All rights reserved
8 Megabit (256K x 32-Bit) EEPROM MCM
79C0832
The software data protection function is to prevent unintentional programming caused by noise generated by external circuits. In software data protection mode, 3 bytes of data must be input before write data as follows. These bytes can switch the nonprotection mode to the protection mode.
Software data protection mode can be canceled by inputting the following 6 bytes. Then, the EEPROM turns to the non-protection mode and can write data normally. However, when the data is input in the canceling cycle, the data cannot be written.
Memory
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(c)2001 Maxwell Technologies All rights reserved
8 Megabit (256K x 32-Bit) EEPROM MCM
79C0832
Memory
96-PIN RAD-PAK(R) QUAD FLAT PACKAGE
SYMBOL MIN A b c D D1 e S1 F1 L L1 L2 A1 N 1.175 --2.485 --.152 .184 .010 --1.408 DIMENSION NOM .200 .012 .009 1.420 1.162 .050 .129 1.180 2.528 2.500 1.700 .165 96 .178 1.185 2.543 2.505 MAX .216 .013 .012 1.432
Q96-01 Note: All dimensions in inches
All data sheets are subject to change without notice
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(c)2001 Maxwell Technologies All rights reserved
8 Megabit (256K x 32-Bit) EEPROM MCM
Important Notice:
79C0832
These data sheets are created using the chip manufacturers published specifications. Maxwell Technologies verifies functionality by testing key parameters either by 100% testing, sample testing or characterization. The specifications presented within these data sheets represent the latest and most accurate information available to date. However, these specifications are subject to change without notice and Maxwell Technologies assumes no responsibility for the use of this information. Maxwell Technologies' products are not authorized for use as critical components in life support devices or systems without express written approval from Maxwell Technologies. Any claim against Maxwell Technologies must be made within 90 days from the date of shipment from Maxwell Technologies. Maxwell Technologies' liability shall be limited to replacement of defective parts.
Memory
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(c)2001 Maxwell Technologies All rights reserved
8 Megabit (256K x 32-Bit) EEPROM MCM
Product Ordering Options
79C0832
Model Number 79C0832 XX F X -XX Feature Access Time Option Details
15 = 150 ns 20 = 200 ns
Screening Flow
Multi Chip Module (MCM) K = Maxwell Class K H = Maxwell Class H E = Engineering (testing @ +25C) I = Industrial (testing @ -55C, +25C, +125C)
Memory
Package
Q = Quad Flat Pack
Radiation Feature
RP = RAD-PAK(R) package RT1 = Guaranteed to 10 krad at die level RT2 = Guaranteed to 25 krad at die level RT4 = Guaranteed to 40 krad at die level
Base Product Nomenclature
8 Megabit (256K x 32-Bit) EEPROM MCM
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(c)2001 Maxwell Technologies All rights reserved

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